FeFET-Based Charge Computing Shows Promise for In-Memory Applications
Recent research highlights the potential of using Ferroelectric Field-Effect Transistors (FeFETs) in charge-based in-memory computing (IMC). The study focuses on the variability of FeFET devices and their impact on computing reliability. By utilizing FeFETs in a charge-based readout mode, variability is significantly reduced, enhancing the reliability of IMC systems. The research also explores the use of FeFETs in non-volatile capacitor (nvCap) mode, which offers advantages such as reduced read disturbances and improved output linearity. These findings suggest that FeFETs could play a crucial role in advancing IMC technologies. 
