What's Happening?
Onsemi has entered into a collaboration with GlobalFoundries to develop and manufacture gallium nitride (GaN) power products. This partnership will utilize GlobalFoundries' 200mm eMode GaN-on-silicon process,
initially focusing on 650V devices. The collaboration aims to expand Onsemi's power semiconductor portfolio, targeting high-voltage applications in AI data centers, electric vehicles, renewable energy, and aerospace. Onsemi plans to integrate GlobalFoundries' GaN technology with its silicon drivers, controllers, and thermally enhanced packaging to produce devices with higher power density and efficiency. These products are expected to be used in power supplies, DC-DC converters, onboard chargers for electric vehicles, solar microinverters, energy storage systems, and motor drives. Onsemi is set to provide samples to customers by the first half of 2026.
Why It's Important?
The collaboration between Onsemi and GlobalFoundries is significant as it addresses the growing demand for efficient power solutions in various high-tech industries. By leveraging GaN technology, the partnership aims to deliver products that offer higher frequency operation, reduced component count, and system size, which are crucial for the development of smaller and more efficient power systems. This advancement is particularly relevant for sectors such as AI data centers and electric vehicles, where power efficiency and density are critical. The move also positions Onsemi and GlobalFoundries as key players in the semiconductor industry, potentially influencing market dynamics and competition, especially in the context of increasing global demand for sustainable and efficient energy solutions.
What's Next?
Onsemi plans to provide samples of the new GaN power devices to customers in the first half of 2026. This timeline suggests that the company is on track to meet the growing demand for advanced power solutions in various industries. As the collaboration progresses, it is likely that other semiconductor companies will monitor the developments closely, potentially leading to further innovations and partnerships in the sector. The successful implementation of these GaN devices could also prompt increased investment in GaN technology, further driving advancements in power electronics.
