What's Happening?
A research team led by the University at Albany has successfully designed, fabricated, and demonstrated a 15-kilovolt (kV) silicon carbide (SiC) insulated-gate bipolar transistor (IGBT). This achievement marks a rare milestone in ultra-high-voltage power
semiconductors, making UAlbany the second institution in the U.S., and the first academic one, to demonstrate such a device. The project, supported by multiyear funding from the U.S. Army Combat Capabilities Development Command (DEVCOM) Army Research Laboratory, involved nearly every stage of the process being carried out in the U.S. UAlbany led device design and characterization, GE Aerospace handled most fabrication, a DoW fab completed final steps, and UAlbany spinout NoMIS Power developed specialized packaging.
Why It's Important?
This breakthrough is crucial for strengthening the U.S.'s leadership in ultra-high-voltage power device technology and creating a strategic domestic advantage in an era of intensifying global competition. Devices operating at 15 kV and beyond are foundational for next-generation power technologies in energy, defense, and artificial intelligence. A single 15 kV SiC IGBT can replace multiple lower-voltage devices, simplifying circuits, reducing equipment size, and improving energy efficiency. This domestic end-to-end pipeline for development and fabrication reduces reliance on foreign suppliers, particularly from countries like China and Japan, where similar devices are currently produced. This enhances national security, fosters technological independence, and supports the growth of high-tech manufacturing jobs within the U.S.
What's Next?
The successful demonstration of the 15 kV SiC IGBT opens doors for new and existing applications in renewable energy conversion, smart grid integration, high-voltage direct current transmission, and the rapidly growing power demands of AI data centers. These devices are also critical for advanced pulse power technologies used in defense applications, fusion energy, and deep drilling. NoMIS Power, a UAlbany spinout, is currently commercializing these devices, indicating a pathway from research to market. Continued investment and collaboration between academic institutions, industry, and government agencies will be essential to scale production and integrate these advanced power semiconductors into critical infrastructure and defense systems.
Beyond the Headlines
The development of ultra-high-voltage power semiconductors in the U.S. has profound implications beyond immediate technological applications. It signifies a strategic effort to build a robust domestic ecosystem for critical technologies, reducing vulnerabilities in the global supply chain and enhancing national resilience. This achievement also highlights the vital role of academic research and government funding in driving innovation that has direct economic and security benefits. The ability to produce these advanced components domestically ensures that the U.S. maintains control over key technologies, which is crucial for future advancements in energy independence, defense capabilities, and the burgeoning field of artificial intelligence. This initiative also serves as a model for future public-private partnerships aimed at strengthening the U.S. industrial base.
