What's Happening?
Wolfspeed, formerly known as Cree, has been at the forefront of developing silicon carbide (SiC) and gallium nitride (GaN) semiconductor technologies. The company has leveraged its partnership with PowerAmerica,
a Department of Energy-funded manufacturing institute, to accelerate the development and testing of its medium-voltage SiC power device technology. This collaboration has enabled Wolfspeed to introduce SiC power device technology products for applications in electric vehicle drivetrains, industrial electronics, and grid-tied power electronics. In May 2019, Wolfspeed announced a $1 billion investment to establish a silicon carbide fabrication facility and a materials mega factory at its headquarters in Durham, North Carolina, aiming to significantly increase its SiC wafer fabrication capacity.
Why It's Important?
The development of SiC technology is crucial for the advancement of electric vehicles and renewable energy systems, as it offers higher efficiency and performance compared to traditional silicon-based semiconductors. Wolfspeed's investment in expanding its production capabilities is a strategic move to meet the growing demand for SiC technology in various industries. This expansion not only positions Wolfspeed as a leader in the semiconductor market but also supports the U.S. government's efforts to enhance domestic semiconductor manufacturing capabilities, which is vital for national security and economic growth.
